| PART |
Description |
Maker |
| AS7C33256FT32_36A AS7C33256FT32_36A.V1.1 AS7C33256 |
3.3V 256K x 32/36 Flow-through synchronous SRAM 256K X 32 STANDARD SRAM, 8.5 ns, PQFP100
3.3V 256K x 32/36 Flow-through synchronous SRAM 256K X 36 STANDARD SRAM, 7.5 ns, PQFP100
3.3V 256K x 32/36 Flow-through synchronous SRAM 256K X 32 STANDARD SRAM, 7.5 ns, PQFP100
3.3V 256K x 32/36 Flow-through synchronous SRAM 256K X 32 STANDARD SRAM, 10 ns, PQFP100
DIODE ZENER SINGLE 1000mW 24Vz 10.5mA-Izt 0.05 5uA-Ir 18.2Vr DO41-GLASS 5K/AMMO
From old datasheet system
Sync SRAM - 3.3V
|
Alliance Semiconductor, Corp.
Alliance Semiconductor Corporation
ALSC
|
| K6R1004C1D K6R1004C1D-JC12 |
256K X 4 STANDARD SRAM, 12 ns, PDSO32
256K x 4 Bit (with /OE) High-Speed CMOS Static RAM Data Sheet
|
Samsung Electronic
|
| IS61LV25616AL IS61LV25616AL-10B IS61LV25616AL-10BI |
20 AMP MINIATURE PC BOARD RELAY
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY 256K X 16 STANDARD SRAM, 12 ns, PDSO44
|
ISSI[Integrated Silicon Solution, Inc]
ISSI[Integrated Silicon Solution Inc]
Integrated Silicon Solution Inc
Integrated Silicon Solution, Inc.
|
| IS61LV25616L-15K IS61LV25616L-15KI IS61LV25616L-12 |
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY 256K X 16 STANDARD SRAM, 15 ns, PDSO44
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY 256K X 16 STANDARD SRAM, 12 ns, PDSO44
|
Integrated Silicon Solution, Inc.
INTEGRATED SILICON SOLUTION INC
|
| CXK77B1841GB |
4Mb Late Write LVTTL High Speed Synchronous SRAM (256K x 18Bit)(4M位、写延迟LVTTL高速同步静态RAM (256K x 18) 4Mb的后写入LVTTL高速同步SRAM56 × 18位）分位，写延迟LVTTL高速同步静态随机存储器56 × 18位）
|
Sony, Corp.
|
| LY61L2568 LY61L2568LL LY61L2568ML LY61L2568MV LY61 |
256K X 8 BIT HIGH SPEED CMOS SRAM
|
Lyontek Inc.
|
| IDT70T3319S133BF IDT70T3319S133BC IDT70T3319S133DD |
JFET-Input Operational Amplifier 8-SOIC 0 to 70
HIGH-SPEED 2.5V 512/256/128K X 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 128K X 18 DUAL-PORT SRAM, 12 ns, PQFP144
HIGH-SPEED 2.5V 512/256/128K X 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 128K X 18 DUAL-PORT SRAM, 15 ns, PQFP144
HIGH-SPEED 2.5V 512/256/128K X 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 高.5V12/256/128K X 18 SYNCHRONOU S双，端口静态与3.3V.5V的内存界
JFET-Input Operational Amplifier 8-TSSOP 0 to 70 512K X 18 DUAL-PORT SRAM, 15 ns, PQFP144
HIGH-SPEED 2.5V 512/256/128K X 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 256K X 18 DUAL-PORT SRAM, 12 ns, PQFP144
HIGH-SPEED 2.5V 512/256/128K X 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 256K X 18 DUAL-PORT SRAM, 15 ns, PQFP144
JFET-Input Operational Amplifier 8-SO 0 to 70 256K X 18 DUAL-PORT SRAM, 12 ns, PBGA208
HIGH-SPEED 2.5V 512/256/128K X 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 256K X 18 DUAL-PORT SRAM, 10 ns, PBGA208
|
Integrated Device Technology, Inc.
INTEGRATED DEVICE TECHNOLOGY INC
|
| M68AW256ML70ZB6 M68AW256ML55ND1 M68AW256ML55ND1E M |
4 Mbit (256K x16) 3.0V Asynchronous SRAM 4兆位56K × 16.0V异步SRAM
256K X 16 STANDARD SRAM, 55 ns, PDSO44
256K X 16 STANDARD SRAM, 70 ns, PBGA48
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| CXK77B1840GB |
4Mb Late Write HSTL High Speed Synchronous SRAM (256K x 18 Organization)
From old datasheet system
|
Sony
|
| HY62LF16406C |
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
HYNIX
|
| HY62SF16404E |
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
HYNIX
|
